The mission of the committee is to monitor the developments in both the emerging and the technologically significant device technologies; plan and coordinate the activities of the IEEE MTT Society in those areas; and to promote the dissimination and sharing of technical knowledge in those areas.

The committee’s interests span a wide range of devices, including active and passive devices; two-, three-, and multi-terminal devices; discrete and IC-embedded devices; lumped and distributed devices; semiconductor as well as other (non-semiconductor) devices, excluding only those devices (such as ferrite and superconducting) which are within the domain of other MTT Society technical committees. The MTT-7 committee concerns itself with all significant aspects of engineering the devices, including their design, layouts, optimization, and tradeoffs; modeling, simulation, testing, and characterization; characteristics, performance, and applications; reliability, failure mechanisms and lifetimes; parasitics, packaging, and electrical or thermal requirements; sensitivity to operating conditions or environment, such as temperature, nuclear radiation, and magentic field; control via optical excitation, mechanical stress, and external fields; quality control, producibility, and cost; and the history, evolution, future prospects, and fundamental limitations.

The number of devices proposed, experimentally tried, and mentioned in the literature is far larger (by perhaps two orders of magnitude) than the number of those that are practical, commonly used, or commercially successful. The following roster includes only those devices that are used in a current application.

• Schottky-bararier and junction diodes
• Tunnel diodes
• Masers
• IMPATT diodes
• Gunn devices
• Field-effect family of transistors (JFETs, MESFETs, HEMTs, p-HEMTs)
• Bipolar junction transistors (BJTs) and heterojunction bipolar transistors (HBTs)
• Resonant Tunneling Diodes (RTDs)

The Technical Committee MTT-7 plans to organize the following activities in the immediate future.

Key Tutorial Literature (Books only):

The following list intended to be a technical (rather than a historical) resource; therefore, it is limited to citations of recent vintage in the field of interest of the Technical Committee MTT-7.

1. K. Chang, Microwave Solid-State Circuits and Applications (New York : John Wiley, 1994).

2. S. Yngvesson, Microwave Semiconductor Devices (Norwell, Mass : Kluwer, 1991).

3. C. A. Lee and G. C. Dalman, Microwave Devices, Circuits and Their Interaction (New York : Wiley, 1994)

4. S. Y. Liao, Microwave Solid-State Devices (Englewood Cliffs, N.J. : Prentice Hall, 1985).

5. W. A. Davis, Microwave Semiconductor Circuit Design (New York : Van Nostrand Reinhold, 1984).

6. I. Bahl and P. Bhartia, Microwave Solid-State Circuit Design (New York : Wiley, 1988).

7. T. S. Laverghetta, Solid-State Microwave Devices (Norwood, Mass. : Arech House, 1987).

(To be continued)

List of Pre-1985 Books on Solid-State Microwave Devices

(Compiled by Madhu S. Gupta; additions welcome)

Reading Resource List: Monographs, Reprints, and Review Books

A. General Books

A1. H. A. Watson, Microwave Semiconductor Devices and Their Circuit Applications, (McGraw-Hill, New York, 1969).

A2. H. V. Shurmer, Microwave Semiconductor Devices, (Wiley-Interscience, New York, 1971).

A3. H. N. Daglish, J. G. Armstrong, J. C. Walling and C. A. P. Foxell, Low-Noise Microwave Amplifiers, (Cambridge Univ. Press, Cambridge, 1968).

A4. R. J. Chaffin, Microwave Semiconductor Devices: Fundamentals and Radiation Effects, (John Wiley, New York, 1973).

A5. S. M. Sze, Physics of Semiconductor Devices, (Wiley-Interscience, New York, 1969).

A6. B. C. deLoach, Jr., "Recent Advances in Solid-State Microwave Generators," Advances in Microwaves, vol. 2, L. Young, ed., (Academic Press, New York, 1967). (TK7870, A2445).

A7. F. Sterzer, "Microwave Appplications," in Handbook of Semiconductor Electronics, L.P. Hunter, 3rd ed., (McGraw Hill, New York, 1970).

A8. M. J. Howes and D. V. Morgan, editors, Microwave Devices: Device Circuit Interactions, (Wiley-Interscience, New York, 1976).

A9. S. Y. Liao, Microwave Devices and Circuits, (Prentice Hall, Englewood Cliffs, N.J., 19 ).

A10. M. J. Howes and D. V. Morgan, eds., Microwave Solid State Devices and Applications, (Peter Peregrimus Ltd. and Institution of Electrical Engineers, England, l980).

A11. S. Y. Liao, Microwave Solid State Devices, (Prentice Hall, Englewood Cliffs, N.J. 1984).

A12. J. Helszajn, Passive and Active Microwave Circuits, (John Wiley, New York, 1978).

A13. T. C. Edwards, Introduction to Microwave Electronics, (Edward Arnold, Baltimore, Md., 1984).

B. Nonlinear Circuit Theory

B1. L. O. Chua,Introduction to Nonlinear Network Theory, (McGraw Hill, New York, 1969).

B2. R. Clay, Nonlinear Networks and Systems, (Wiley-Interscience, New York, 1971).

C. Nonlinear Devices and Circuits

C1. S. N. Ivanov, N.A. Penin, N.E. Skvortsova, and Yu. F. Sokolov, Physics of Microwave Semiconductor Diodes, (Translated from Russian by R. C. Glass), (Iliffe, London, 1969). (TK7871.86, F5671)

C2. K. E. Mortenson and J. M. Borrego, Design, Performance, and Applications of Microwave Semiconductor Control Components, (Artech House, Dedham, Mass., 1972). (A collection of reprints).

C3. R. V. Garver, Microwave Diode Control Devices, (Artech House, Dedham, Mass. 1975).

C4. H. C. Torrey and C. A. Whitmer, Crystal Rectifiers, MIT Radiation Laboratory Series, vol. 15, (McGraw Hill, New York, 1948). (Reprinted in paperback, Dover, New York, 1965).

C5. A. A. M. Saleh, Theory of Resistive Mixers, (MIT Press, Cambridge, Mass., 1971).

C6. F. L. Warner, "Detection of Millimetre and Submillimetre Waves," in Millimetre and Submillimetre Waves, F. A. Benson, ed., (Iliffe, London, 1969). (TK7876, B474)

C7. F. R. Arams, Infrared to Millimeter Wavelength Detectors, (Artech House, Dedham, Mass., 1972. (A collection of reprints)

C8. F. A. Podovani, "The Voltage Current Characteristic of Metal-Semiconductor Contacts," in Semiconductors and Semimetals, vol. 7A, R. K. Willardson and A. C. Beer, editors, (Academic Press, New York, 1971). (QC612, S4, W696)

C9. K. J. Button, ed., Infrared and Millimeter Waves, vol. 3: Submillimeter Techniques, (Academic Press, New York, 1980).

C10. J. F. White, Semiconductor Control, (Artech House, Dedham Mass., 1977), Reprinted as Microwave Semiconductor Engineering, (Van Nostrand Reinhold, Florence, Ky, 19 ).

C11. M. J. Howes and D. V. Morgan, Variable Impedance Devices, (John Wiley, Chichester, England, 1978).

D. Parametric Devices and Electronics

D1. W. H. Louisell, Coupled Mode and Parametric Electronics, (Wiley & Sons, New York, 1960).

D2. P. Penfield, Jr., Frequency-Power Formulas, (The M.I.T. Press, Cambridge, Mass., 1960).

D3. P. Penfield, Jr., and R. P. Rafuse, Varactor Applications, (The M. I. T. Press, Cambridge, Mass., 1962).

D4. L. A. Blackwell and K. L. Kotzebue, Semiconductor-Diode Parametric Amplifiers, (Prentice-Hall, Englewood Cliffs, N. J., 1961).

D5. G. D. Sims and I. M. Stephenson, Microwave Tubes and Semiconductor Devices, (Blackie, London, and Interscience, New York, 1963).

D6. L. S. Nergaard and M. Glicksman, Microwave Solid State Engineering, (D. Van Nostrand, Princeton, N. J., 1964).

D7. S. N. Levine and R. R. Kurzork, Selected Papers on Semiconductor Microwave Electronics, (Dover, New York, 1964. (A collection of reprints)

D8. K. K. N. Chang, Parametric and Tunnel Didoes, (Prentice-Hall, Englewood Cliffs, N. J., 1964).

D9. D. G. Tucker, Circuits with Periodically Varying Parameters, (Van Nostrand-Reinhold, London, 1964). (TK7870, T891)

D10. D. P. Howson and R. B. Smith, Parametric Amplifiers, (McGraw-Hill, London, England, 1970). (TK7871.24 H866)

D11. K. E. Mortenson, Variable Capacitance Diodes, (Artech House, Dedham, Mass., 1973).

D12. J. C. Decroly, L. Laurent, J. C. Lienard, G. Marechal, and J. Vorobeitchik, Parametric Amplifiers,(John Wiley, New York, 1973). (TK7871.24, P222)

D13. M. Uenohara, "Cooled Varactor Parametric Amplifiers," in Advances in Microwaves, 2, L. Young, ed., (Academic Press, New York, 1967).

D14. J. O. Scanlan, "Analysis of Varactor Harmonic Generators," in Advances in Microwaves, 2, L. Young, ed. (Academic Press, New York, 1967).

D15 H. G. Unger and W. Harth, "Physics and Applications of MIS Varactors" in Advances in Electronics and Electron Physics, vol. 34, L. Marton, editor, (Academic Press, New York, 1973).

D16. K. H. Locherer and C. D. Brandt, Parametric Electronics, Springer Series in Electrophysics, vol. 6, (Springer Verlag, Berlin, 1982).

D17. N. S. Prywes, Amplifiers and Memory Devices with Films and Diodes, (McGraw Hill, New York, 1965).

E. Active Network Theory

E1. L. de Pian, Linear Active Network Theory, (Prentice Hall, Englewood Cliffs, N.J., 1962).

E2. E. S. Kuh and R. A. Rohrer, Theory of Linear Active Network, (Holden-Day, San Francisco, l967).

E3. R. Spence, Linear Active Networks, (John Wiley, New York, 1970).

E4. S. S. Haykin, Active Network Theory, (Addison-Wesley Publishing Co., Reading, Mass. 1970). (TK454.2, H419)

F. Tunnel Diodes and Applications

F1. S. P. Gentile, Basic Theory and Applications of Tunnel Diodes, (D. Van Nostrand, Princeton, N. J., 1962).

F2. G. E. Tunnel Diode Manual, (General Electric, Schenectady, N. Y., 1961).

F3. Tunnel Diodes for Switching and Microwave Applications, RCA Technical Manual TD-30, (RCA, Sommerville, N. J. l963).

F4. J. M. Carroll, Tunnel-Diode and Semiconductor Circuits, (McGraw-Hill, New York, 1963). (A collection of papers)

F5. W. F. Chow, Principles of Tunnel Diode Circuits, (John Wiley, New York, 1964).

F6. J. O. Scanlan, Analysis and Synthesis of Tunnel Diode Circuits, (John Wiley, New York, 1966).

F7. F. Sterzer, "Tunnel Diode Devices," in Advances in Microwaves, Vol. 2, L. Young, ed., Academic Press, New York, 1967).

F8. M. A. Lee, B. Easter, and H. A. Bell, Tunnel Diodes, (Chapman & Hall, London, 1967). (TK7871.87, L4)

F9. H. C. Okean, "Tunnel Diodes," in Semiconductors and Semimetals, Vol. 7B, R. K. Willardson and A. C. Beer, eds., (Academic Press, New York, 1971). (QC612, S4, W696)

F10. D. K. Roy, Tunnelling and Negative Resistance Phenomena in Semiconductors, (Pergamon Press, Elmsford, N. Y., 1977).

G. Masers

G1. J. R. Singer, Masers, (John Wiley, New York, 1959). (TK7872 M45 S617)

G2. G. Troup, Masers, (Methuen, London, 1959). (TK872, M45, T861)

G3. A. E. Siegman, Microwave Solid-State Masers, (McGraw-Hill, New York, 1964) . (TK7872, M45, S571)

H. Transit-Time and Bulk Effect Devices

H1. I. B. Bott and W. Fawcett, "The Gunn Effect in Gallium Arsenide," in Advances in Microwaves, vol. 3, L. Young, ed., (Academic Press, New York, 1968). (TK7870, A2445, v. 3, 1968)

H2. J. E. Carroll, Hot Electron Microwave Generators, (Edward Arnold, London, and American Elsevier, New York, 1970). (TK7872, 07, C319)

H3. J. W. Orton, Material for the Gunn Effect, (Mills and Boon, London, England, 1971).

H4. J. A. Copeland and S. Knight, "Applications Utilizing Bulk Negative Resistance, in Semiconductors and Semimetals, vol. 7A, R. K. Willardson and A. C. Beer, eds., (Academic Press, New York, 1971). (QC612, S4, W696)

H5. T. Misawa, "IMPATT Diodes," in Semiconductors and Semimetals, vol. 7B, R. K. Willardson and A. C. Beer, eds., (Academic Press, New York, 1971). (QC612, S4, W696)

H6. G. Gibbons, Avalanche Diode Microwave Oscillators, (Oxford Univ. Press, London, England, 1972).

H7. L. F. Eastman, ed., Gallium Arsenide Microwave Bulk and Transit-Time Devices, (Artech House, Dedham, Mass. 1972). (A collection of reprints).

H8. L. A. MacKenzie, "Microwave Bulk Solid-State Devices," in Topics in Intersystem Electromagnetic Compatibility, (Holt, Rinehart, and Winston, New York, 1972).

H9. P. J. Bulman, G. S. Hobson, and B. C. Taylor, Transferred Electron Devices,(Academic Press, London, 1972) . (TK7872, G8, B938)

H10. W. J. Evans, "Avalanche Diode Oscillators," in W. D. Hershberger, ed., Topics in Solid State and Quantum Electronics, (John Wiley, New York, 1972)

H11. H. Hartnagel, Gunn-Effect Logic Devices, (American Elsevier Publishing Co., New York, 1973). (TK7872, G8, H37)

H12. G. I. Haddad, ed., Avalanche Transit-time Devices, (Artech House, Dedham, Mass., 1973). (A collection of reprints)

H13. G. S. Hobson, The Gunn Effect, (Oxford Univ. Press, London, 1974).

H14. B. G. Bosch and R.W.H. Englemann, Gunn-Effect Electronics, (Pitman, London, and Halsted Press, New York, 1975).

H15. M. P. Shaw, H. L. Grubin, and P. R. Soloman, "Gunn-Hilsum Effect Electronics", in Advances in Electronics and Electron Physics, L. Marton, ed., (Academic Press, New York, 1980).

H16. M. P. Shaw, H. L. Grubin, and P. R. Solomon, The Gunn-Hilsum Effect, (Academic Press, New York, 19 )

H17. K. J. Button, ed., Infrared and Millimeter Waves, vol. 1: Sources of Radiation, (Academic Press, New York, 1979).

I. Three-terminal Transfer-Active Devices

I1. P. L. Hower, "The GaAs Field-Effect Transistor," in Semi-conductors and Semimetals, vol. 7A,, R.K. Willardson and A. C. Beer, eds., (Academic Press, New York, 1971). (QC612, S4, W696)

I2. E. D. Graham and C. W. Gwyn, Microwave Transistors, (Artech House, Dedham, Mass., 1975).

I3. R. A. Pucel, H. A. Haus, and H. Statz, "Signal and Noise Properties of Gallium Arsenide Field Effect Transistors," in Advances in Electronics, vol. 38, L. Marton, ed., (Academic Press, New York, 1975).

I4. R. S. Carson, High-Frequency Amplifiers, 2nd ed., (John Wiley, New York, 1982).

I5. J. Hardy, High Frequency Circuit Design, (Prentice Hall, Englewood Cliffs, N.J. 19 ).

I6. R. S. Pengelly, Microwave Field-Effect Transistors: Theory, Design and Applications, (John Wiley, New York, 1982).

I7. J. Dilorenzo and D. Khandelwal, GaAs FET Principles and Technology, (Artech House, Dedham, Mass, 1982).

I8. R. Soares, J. Graffewill, and J. Obregon, Applications of GaAs MESFETs, (Artech House, Dedham, Mass., 1983).

I9. T. T. Ha, Solid State Microwave Amplifier Design, (John Wiley, New York, 1981).

J. Microwave Integrated Circuits

J1. L. Young and H. Sobol, eds., Advances in Microwaves, vol. 8, (Academic Press, New York, 1974). (several articles)

J2. K. C. Gupta and A. Singh, Microwave Integrated Circuits, (John Wiley-Halsted Press, New York, 1974).

J3. J. Frey, ed., Microwave Integrated Circuits, (Artech House, Dedham, Mass., 1975). (A reprint collection).

J4. K. C. Gupta, R. Garg, and R. Chadha, Computer Aided Design of Microwave Circuits, (Artech House, Dedham, Mass., 1982).

J5. K. J. Button and J. C. Wiltse, Infrared and Millimeter Waves, vol. 4: Millimeter Systems, (Academic Press, New York, 1981).

K. Superconducting Devices

K1. B. W. Petley, An Introduction to the Josephson Effect, (Mills & Boon, London, England, 1971).

K2. L. Solymer, Superconductive Tunnelling and Applications, (Chapman & Hall, London, England, 1972). (QC176.8 T8 S692).

K3. A Barone and G. Paterno, Physics and Applications of the Josephson Effect, (John Wiley, New York, 1982).

L. Acoustic and Ultrasonic Devices

L1. J. W. Tucker and V. W. Rampton, Microwave Ultrasonics in Solid State Physics, (American Elsevier, New York, 1972).

L2. A. J.Slobodnik, Jr., E. D. Conway and R. T. Delmonico, Microwave Acoustics Handbook, (multiple volumes), (Air Force Cambridge Research Laboratories, Bedford, Mass., 1973).

M. Magnetic Devices

M1. B. Lax and K. J. Button, Microwave Ferrites and Ferrimagnetics, (McGraw Hill, New York, 1962). (TK7870 L425)

M2. A. G. Gurevich, Ferrites at Microwave Frequencies, (Consultants Bureau, New York, 1963). (TK7872 S4 G9792)

M3. K. J.Button and T. S. Hartwick, "Microwave Devices," in Magnetism, vol. l, (Academic Press, New York, 1963).

M4. W. H. von Aulock, Handbook of Microwave Ferrite Materials,(Academic Press, New York, 1965).

M5. W. H. von Aulock and C. E. Fay, Linear Ferrite Devices for Microwave Applications, Supplement to Advances in Electronics and Electron Physics, L. Morton, editor, (Academic Press, New York, 1968).

M6. L.R. Whicker, Ferrite Control Components, 2 vols., (Artech House, Dedham, Mass., 1973).

M7. J. Helszajn, Non-reciprocal Microwave Junctions and Circulators, (John Wiley, New York, 1975). (TK7871.65, H44)

Last Edit: 6/20/03