Microwave Theory and Techniques Society

Distinguished Microwave Lecturer Program

Previous Distinguished Microwave Lecturers



Distinguished Microwave Lecturer topics, year last given, and speaker:

Design of Integrated RF CMOS Circuits, 2008, (Georg Boeck)

Global Stability Analysis and Stabilization of Power Amplifiers, 2008, (Almudena Suarez)

Nonlinear Analog Behavioral Modeling of Microwave Devices and Circuits, 2008,  (David E. Root)

Through-the-Wall Personnel Detection Technology, 2008, (Victor M. Lubecke)

 

Linear Power Amplifiers for Mobile Communication Systems, 2007, Bumman Kim

Maxwell, Life of James Clerk, 2007, James Rautio

Multi-Level Modeling for Complex Microwave/High-Speed Design, 2007, Wolfgang Hoefer

Terahertz Technology in Outer and Inner Space, 2007, Peter Siegel

 

Calibration and Error Correction Techniques for Network Analysis, 2006, Doug Rytting

Microwave Applications of Metamaterials and Structures, 2006, Tatsuo Itoh

Microwave GaN Based Field Effect Transistors, 2006, Michael Shur

Recent Advances in High Performance Communication Modules and Circuits, 2006, Joy Laskar

 

Flip-Chip for Millimeter-Wave and Broadband Packaging, 2005, Wolfgang Heinrich

Large-Signal Physical Operation of SiC and Nitride-based Microwave Field-Effect Transistors, 2005, Robert Trew

Microwave Passive Circuit Design Without Hardware Prototyping – How Close it Comes with State-of-Art Electromagnetic Simulation, 2005,  Wojciech Gwarek

 

Application of MEMs Technology to RF/Microwave Systems, 2004, Gabriel Rebeiz

Microwave Photonics for Broadband Radio Systems, 2004, Christian Schaffer

Modern Circulators and Isolators for Wireless and Automotive Applications, 2004, L.E. Davis

Wireless Access Using Microwave Photonics , 2004, Alwyn Seeds

For synopses, see below.

 

Georg Beock

 (Term Ended Dec. 2008)

Technische Universitaet
Chair, Microwave Engineering Lab
Berlin, Germany

Boeck@tu-Berlin.de

Design of Integrated RF CMOS Circuits

The continuous progress of silicon technology has enabled the emergence of digital mobile broadband communication systems for voice, data and multimedia transmission with good quality of service. Data-rate and mobility trade-offs and different standards like 2G, 3G, Bluetooth, WLAN, GPS and digital multimedia broadcasting are leading to multimode requirements and issues relating to coexistence and inter-working of these different technologies must be solved. Single chip integration with digital part, high integration density and excellent RF performance, low power consumption and low cost under mass production aspects are further requirements. First system-on-chip (SoC) demonstrations show that today CMOS technologies seem to be able to fulfil all these requirements.

This lecture will review current RF-CMOS technologies, RF-architectures and re-configurability studies, and circuit and system design aspects for mobile communication applications. It will consider special requirements on wafer processes like leakage and analogue and RF capabilities and will look to the world of system-level design. In this context, power-levels, form-factors and cost are key requirements for system-on-chip and system-in-package-solutions. Of course, new challenges for the future will be considered and explored, too.

 

Victor Lubecke

(Term Ended Dec. 2008)

Department of Electrical Engineering

University of Hawaii at Manoa

 

Lubecke@IEEE.Org

Through-the-Wall Personnel-Detection Technology

 Technology that can be used to unobtrusively detect and monitor the presence of human subjects from a distance and through barriers can be a powerful tool for law enforcement, military, and health monitoring applications. Various technologies from passive millimeter-wave imaging to ultra wideband radar have demonstrated potential for identifying silhouettes, detecting gross motion, and even distinguishing illicit materials and biological characteristics through various obstructions. Compact radar solutions have been used to detect and monitor cardiopulmonary activity of hidden stationary subjects, in some cases leveraging the presence of ambient radio signals to provide a virtually passive means to detect, isolate, and physiologically monitor human subjects through walls. Practical applications ranging from counter-terrorism to outpatient monitoring require solutions that are accurate, affordable, easily deployed, and minimally tended. An overview of current research efforts addressing these challenges through radio, signal processing, and sensor networking theory and hardware will be presented.

 

 

David Root

 (Term Ended Dec. 2008)

Principle Research Scientist

Worldwide Process and Technology Centers 

Agilent Technologies

1400 Fountaingrove Parkway

Santa Rosa, CA 95403

USA

 

+1 (707) 577-4091 (Phone)

+1 (707) 577-4787 (FAX)

 

David_Root@Agilent.Com

 

Nonlinear Analog Behavioral Modeling of Microwave Devices and Circuits

Modern microwave systems are designed in a top-down hierarchical process, with specifications starting at the system level, propagating down towards the subsystem, module, integrated circuit, and finally to the level of the transistor, resistor, and other fundamental electronic building blocks. A complimentary bottom-up process combines accurate representations of the building blocks at one level of abstraction to create or verify a functional block at the next higher level of design complexity. At a low level in the design hierarchy is the nonlinear device, or transistor. A detailed model, involving the simulation of the many coupled partial differential equations of physics is often needed to design such a device. However, one cannot simulate an entire IC at this physically detailed level. The complexity of the problem is overwhelming in terms of computer resources and time. Instead, for the purpose of integrated circuit design, transistor terminal (behavioral) characteristics can be abstracted into “compact” nonlinear models (SPICE models) and their interaction simulated at the circuit level. Analogously, modern communication systems are sufficiently complex to preclude their complete simulation at the compact transistor model level of description. There are simply too many nonlinear equations to solve to make this practical. Instead, the input-output behavior of the ICs can be abstracted into functional block behavioral models, and the simulations done at the next higher abstraction level. 

This lecture introduces general concepts and specific techniques for effective (efficient, general, and accurate) nonlinear behavioral modeling of microwave semiconductor devices and functional circuit blocks. A behavioral model is a simplified but accurate model of a lower-level component in the design hierarchy that simulates efficiently at the next higher level of abstraction. A unified treatment at both the device and functional block level is a distinguishing feature of this presentation. So too is the application to behavioral models constructed from real measurements and also from simulations starting from a detailed (complex) model. The emphasis is placed on the combination of nonlinearity and dynamics. Nonlinearity includes harmonic and inter-modulation distortion, clipping, etc. Dynamics includes frequency-dependence and long-term memory effects from a variety of physical origins. In the realm of dynamic nonlinearities, insight from linear analysis cannot always be applied. Superposition is not generally valid, the Fourier domain is less useful, and Green functions don’t exist. No fully general or overarching theories of nonlinear dynamical systems exist that are comparable to what exists for linear systems. Nevertheless, great progress has been made recently in nonlinear behavioral modeling. In fact, this lecture suggests we are at the threshold for full interoperability of large-signal measurement systems, modeling approaches, and simulation algorithms for nonlinear hierarchical behavioral modeling. This means we can begin to do for driven nonlinear microwave systems what small-signal S-parameters enable for linear systems.

 

Almudena Suarez

 (Term Ended Dec. 2008)

University of Cantabria
Communications Engineering Dept.

Almudena.Suarez@unican.es

Global Stability Analysis and Stabilization of Power Amplifiers

Power amplifiers often exhibit instabilities giving rise to frequency division by two or oscillations at incommensurate frequencies. These phenomena, observed from a certain level of input power, cannot be detected through a small-signal stability analysis of the circuit. Instead, a large-signal stability analysis must be performed. Other behaviors, like hysteresis and chaotic solutions, can also be obtained when the input power is varied. The qualitative changes in the output-power spectrum are due to bifurcations or qualitative stability changes in the circuit solution or in the number of solutions when the parameter is varied. The talk introduces the local and global stability concepts and the analysis techniques, based on harmonic balance. The first objective is to allow a good comprehension of the different phenomena. The second objective is to provide practical simulation tools for an efficient prediction and elimination of the undesired behaviour. Different approaches for the local-stability analysis of nonlinear regimes will be presented, with emphasis on the pole-zero identification. Then, techniques will be shown for the detection of the most common types of bifurcations in power amplifiers. The final goal will be the stabilization of the circuit and the design corrections in order to suppress the undesired phenomena will also be presented.

For illustration, the simulation tools will be applied to two different switching amplifiers developed at California Institute of Technology. These amplifiers have remarkably high efficiency, but in intermediate input-power range they exhibited different undesired phenomena. The first amplifier is a Class-E/F amplifier, which showed oscillations, hysteresis and chaos. The second amplifier is a Class-E amplifier, which showed jumps in the power-transfer curve and sideband noise amplification. After the application of the different techniques, the two amplifiers were globally stabilized for all the expected operating values of the amplifier bias voltage and input power. This was achieved with negligible degradation of the amplifier performance, in terms of output power and drain efficiency. The stable behaviour obtained in simulation was experimentally confirmed.

 

   

Wolfgang Hoefer

(Term Ended December 2007)


Dept. of Electrical and Computer Engineering
University of Victoria
P.O. Box 3055 STN CSC
Victoria, B.C. V8W 3P6, CANADA
T: +1 (250) 721-6030, Sec: -8821
F: +1 (250) 721-6230 or -6052

 

WHoefer@ECE.UVIC.ca

 

Multi-Level Modeling for Complex Microwave/High-Speed Design

Complex communication and information systems operating in the Gigahertz range often combine multiple analog and digital functions. The design of such systems must capture all electromagnetic effects and interactions that impact their performance. However, it is impossible to model such systems globally at the field and device levels. Therefore, designers must take a hierarchical approach (top-down design) by which the system is conceived at a high level of abstraction and in behavioral terms. The specifications for its functional components are formulated at the network or circuit level. They, in turn, define a physical structure that requires frequency- or time-domain electromagnetic field analysis. Once the functional components have been realized, their actual physical behavior must be analyzed or measured, including possible parasitic interactions between them, and abstracted into realistic (as opposed to initially specified) behavioral models that accurately predict their impact on overall system performance (bottom-up verification). This methodology also addresses signal integrity, packaging, interconnects, electromagnetic compatibility (EMC), and thermal issues.

The purpose of this lecture is to familiarize our members with evolving design approaches for systems of large technological and functional complexity, and to demonstrate how microwave modeling and design practices can be integrated into a wider flexible multi-level modeling
environment. Techniques for interfacing models at the behavioral, network, circuit and field levels will be demonstrated. They range from order reduction of field models to the coupling of field- and circuit solvers, extraction of equivalent circuits from field solutions and measurements, behavioral representation by neural networks, and the linking of electromagnetic and thermal solvers. The key is to describe different parts of a complex structure by the most appropriate model of lowest possible order, while maintaining a two-way correspondence between functional behavior and physics across the modeling hierarchy.

 

Bumman Kim 

(Term Ended December 2007)

Head and Professor Department of Electrical Engineering
Director of the Microwave Application Research Center
Pohang University of Science and Technology
Namgu Pohang 790-784, Korea

BmKim@postech.ac.kr


Linear Power Amplifiers for Mobile Communication Systems

Linear power amplifiers for base-station application require high efficiency and good linearity. To achieve the goal, the main research has two directions: high efficiency linear power amplifier and error correction technique to further improve the linearity of the amplifier.
We have pursued Doherty amplifier for the high efficiency linear power amplifier, and digital and analog predictions for the linearity enhancement.
For the Doherty amplifiers, the bias points of the two cells are optimized for harmonic cancellation. Due to the different biases for the two cells, the output powers generated by the two cells are different according to the power level. Hence, the load modulation technique of the Doherty amplifier is adopted to combine them, properly, regardless of the ratio of the output powers. Doherty amplifier operation with load matching at both low and high power levels has been demonstrated using offset-line concept. The circuit is implemented using silicon LDMOSFETs and demonstrated significantly enhanced performances.
An N-way extending technique of the Doherty amplifier has been demonstrated. The N-way technique has the capability to discretely increase the number of peaking amplifiers. For the experimental verification, the 2-, 3-, and 4-way Doherty amplifiers have been implemented at the 2.14 GHz band. The experimental results show that the 3-way delivers the best ACLR improvement and the 2-way the best PAE improvement. For the similar purpose, the even input drive, driving more power for the peaking, has been tried with good success.
We have introduced an adaptive gate bias control circuit to the Doherty amplifier for further improvement in efficiency. The gate biases of the carrier and peaking amplifiers are controlled according to the envelope of the input signal. The optimum shapes of the gate control voltages are determined using envelope simulation. For verification, the proposed power amplifier is implemented and tested using forward-link WCDMA signals. The test results show superior performances with the proposed amplifier.
For the base-band error correction, we have tried look-up table based feedback approach and feedback predistortion approach, all in digital domain. The feedback predistortion circuit is invented by our group. The circuit tolerance enhanced significantly with large error correction. We also developed an analog predistortion circuit for the amplifier with significant memory effects.


James C. Rautio 

(Term Ended December 2007)

Sonnet Software
100 Elmwood David Road
North Syracuse, NY 13212
USA

Rautio@SonnetSoftware.Com

 

 

Maxwell, Life of James Clerk

James Clerk Maxwell stands shoulder to shoulder with Newton and Einstein, yet even those of us who have spent decades working with Maxwell's equations are almost totally unfamiliar with his life and times. This presentation, from the viewpoint of a microwave engineer, draws on many sources in providing an understanding of James Maxwell himself. What was Maxwell like as an infant? What was the tragedy at eight years old that profoundly influenced his life? What unique means of transportation did young Maxwell use to escape a cruel tutor? What memorable event occurred on his first day of school? When did he publish his first papers, and what were they about? What did Maxwell have to do with the rings of Saturn? Why did he lose his job as a professor? Why did he have a hard time getting another job? What was his wife like? What is Maxwell's legacy to us? The answers to these questions provide insight into Maxwell the person and add an extra dimension to those four simple equations we have studied ever since.

 

Peter Siegel  

(Term Ended December 2007)

California Institute of Technology Jet Propulsion Laboratory
4800 Oak Grove Drive
Pasadena, CA 91109
USA 

PHS@Merlin.JPL.NASA.Gov

 

Terahertz Technology in Outer and Inner Space

After more than 30 years of niche applications in the space sciences area, the field of Terahertz Technology is entering a true Renaissance. While major strides continue to be made in submillimeter wave astronomy and spectroscopy, the past few years have seen an unprecedented expansion of terahertz applications, components and instruments. Broad popular interest in this unique frequency domain has emerged for the first time, spanning applications as diverse as biohazard detection and tumor recognition. Already there are groups around the world who have applied specialized Terahertz techniques to disease diagnostics , recognition of protein structural states , monitoring of receptor binding , performing label-free DNA sequencing and visualizing contrast in otherwise uniform tissue . A commercial terahertz imaging system has recently started tests in a hospital environment1 and new high sensitivity imagers with much deeper penetration into tissue have begun to emerge . Solicitations for more sophisticated instruments and enabling terahertz components have filtered into US agency proposal calls from DoD and NASA, to NSF and NIH, and many new research groups have sprung up, both in this country and in Europe and Asia. This talk will broadly survey terahertz technology from its cradle applications in space science and spectroscopy to more recent biomedical and chemical uses.

 

Joy Laskar

(Term Ended December 2006)

John Pettite Chair,
School of Electrical and Computer Engineering,
Georgia Institute of Technology,
777 Atlantic Drive,
Atlanta, GA 30332

USA

e. joy.laskar@ece.gatech.edu

 

Recent Advances in High Performance Communication Modules and Circuits


There is no question that the networks of the future require functional improvement along each of the important transmission media: wireless and wired (optical and copper). However, an even more daunting challenge is the integration and coexistence of these technologies in both function and form. The System-on-Package (SOP) paradigm provides a highly integrated, microminiaturized, multifunctional systems technology that optimizes the IC and the package to enable these types of systems. In this talk, we will review the evolutionary trends in IC and module integration and how these trends are bounded by advanced communication applications.

 

 

Tatsuo Itoh

(Term Ended December 2006)

Dept. of Electrical Engineering,
UCLA,
405 Hilgard Avenue,
Los Angeles, CA 90095

USA

e. itoh@ee.ucla.edu

 

Microwave Applications of Metamaterials and Structures

Metamaterials are artificial or man-made structures that have properties not found in naturally existing materials. The most unusual metamaterials are the Left-Handed ones, also called Double Negative or Negative Refractive Index materials, which are characterized by simultaneously negative permittivity and permeability. Many interesting EM propagation phenomena result from the negativeness of the constitutive parameters. For instance, the phase and the group velocities are anti-parallel in a Left-Handed substance. Fundamental theoretical research as well as research on possible revolutionary applications for microwave and RF circuits is underway at various organizations. Although the technology is still in its infancy, novel practical developments have already been proposed. The talk will contain a brief historical account, fundamental concepts, adaptation to microwave environment and several passive components with unique features.

Doug Rytting

(Term Ended December 2006)

Rytting Consulting,
4804 Westminster Place,
Santa Rosa, CA 9540
USA

e. rytting@sbcglobal.net

 

Calibration and Error Correction Techniques for Network Analysis

The accuracy of Vector-Network-Analyzer (VNA) measurements depends critically on calibration and error correction techniques. This talk will cover the evolution of conventional VNA calibration methods from the start of network analysis through the development of new calibration methods for waveform and large-signal analysis. Included will be the original SOLT (Short-Open-Load-Through) methods, the newer self-calibration techniques like TRL, LRL and Unknown-Thru, and the strengths and weaknesses of these various VNA calibration approaches. The talk will conclude with a discussion of new state-of-the-art extensions of the traditional VNA calibration strategy for calibrated waveform measurements at microwave frequencies capable of capturing the both the temporal and large-signal behavior of microwave and digital devices.

Michael Shur

(Term Ended December 2006)

Rensselaer Polytechnic Institute,
CII 9017,
110 8th Street,
Troy,
New York, NY 12180

USA

e. shurm@rpi.edu

 

Microwave GaN based Field Effect Transistors

Unique properties of GaN/AlN/InN and related semiconductors make them superior for high-power applications. Device physics and device design of GaN-based FETs are different from those for more conventional GaAs and InGaAs based transistors. In GaN/InN/AlN transistors, strain control and polarization effects are very important, and a new epitaxial technique (called MEMO-CVD), a novel strain energy band engineering (SEBE) approach, and quantum well designs have been developed to control strain, polarization, and non-ideal effects. Also, a very large sheet electron density at heterointerfaces in the GaN-based FET channels allows for a novel and unique insulated gate heterostructure design that has many advantages over more conventional heterostructure FETs. Special field plate designs can dramatically increase the breakdown voltage. As a result, high current values in GaN-based microwave field effect transistors can be combined with very high breakdown voltages, and these devices have potential of replacing traditional GaAs and InGaAs based microwave field effect transistors.

   

Professor L E Davis

(Term Ended December 2005)

Dept. of Electrical Engineering & Electronics,

University of Manchester Institute of Science and Technology (UMIST),
Sackville Street,
Manchester M60 1QD,
United Kingdom

t. +44-(0)161-200-4685 
f. +44-(0)161-200-4648 

e. l.davis@umist.ac.uk

 

Modern Circulators and Isolators for Wireless and Automotive Applications

The widespread use of isolators and circulators, and their advantages, are well known. However, during the rapid expansion of wireless systems, the development of automotive radars and the move up the electromagnetic spectrum towards terahertz systems, comparatively little attention has been given to the integration of isolators and circulators. The lecture will describe new solutions and miniature components and discuss novel approaches, choices of materials and technologies. Recent theoretical developments, experimental results and design trade-offs will be discussed including cost, size and bandwidth. For example: advances in low-temperature co-fired ceramic (LTCC) technology may enable the realization of 900MHz lumped-element circulators with a volume of a few cubic millimeters. Also, advances in self-biasing ferrites may eliminate the need for external magnets thus providing size and cost benefits for planar integrated circulators up to and beyond 77GHz. At millimetric and sub-millimetric wavelengths it may be possible to replace ferrite parts with semiconductor parts, which in principle would offer a route to full on-chip integration of circulators. The lecture will focus on wireless and automotive applications, but will discuss a broader range of novel developments should these be appropriate to the audience interest. The lecture will be constantly up-dated to keep abreast of the continuing advancements being made in this field.


Professor Wojciech Gwarek

(Term Ended December 2005)


Instytut Radioelektroniki,

Politechnika Warszawska,
00-665 Warszawa,
Nowowiejska 15/19,
Poland

t. +48-22-6607631

e. w.gwarek@ire.pw.edu.pl

Microwave passive circuit design without hardware prototyping – how close it comes with state-of-art electromagnetic simulation


Recent years have brought enormous progress in electromagnetic simulation methods and tools. Microwave engineers are often under pressure to deliver new designs extremely fast and thus tempted to skip the hardware prototyping phase. However, they are often confused about what kind of electromagnetic simulation methods and/or tools should be used for a particular scope of applications, and whether the simulation accuracy can be fully trusted. The lecture is supposed to try and bridge the gap between the electromagnetic modeling research and practical microwave design.

The lecture will start with a review of different electromagnetic simulation methods and their ability to deal with specific problems, as well as their accuracy versus applied computer resources.

The theory will then be illustrated with examples of design based on time-domain electromagnetic simulation. The influence of various simulation parameters on obtained results will be discussed in detail. The actual set of examples will be adjusted to the profile and interests of the prospective audience. It may include such areas of applications as: waveguide components - polarizer's, OMT's,diplexers, filters - transitions, junctions and couplings between different kinds of transmission lines, planar components (in microstrip and coplanar technologies), coaxial connectors, antennas and antenna feeding structures, dielectric waveguides and resonators, periodical (like slow-wave) structures, and quasi-optical components.

 

Dr. Wolfgang Heinrich

(Term Ended December 2005)

Ferdinand-Braun-Institut für Hoechstfrequenztechnik
Albert-Einstein-Str. 11
D-12489 Berlin, Germany
t.  +49-30-6392 2620
f.  +49-30-6392 2602/2642

e.
w.heinrich@ieee.org

 

Flip-Chip for Millimeter-Wave and Broadband Packaging

Emerging packaging solutions. Flip-chip is one markets for mm-wave wireless and sensor systems as well as high bit-rate components demand for cost-effective of the most promising approaches in this regard combining high-volume potential with excellent high-frequency performance. The talk presents the different flip-chip concepts in use,
focusing on the microwave characteristics and approaching the subject from the designer's point of view. Basic electromagnetic properties of the interconnects as well as consequences for chip and package design are discussed. As carrier substrates, conventional ceramics, thin-film, and LTCC-multilayer approaches are covered. Experimental results for various applications document feasibility and capabilities in the frequency range up to 100 GHz.

R.J. Trew

(Term Ended December 2005)

Dept. of Electrical and Computer Engineering,

NC State University,
Raleigh, NC 28695

USA

t. +1-919-515-7350
f. +1-919-515-5523

e. r.trew@ieee.org

 

 

Large-Signal Physical Operation of SiC and Nitride-based Microwave Field-Effect Transistors

Wide bandgap semiconductors show great promise for advancing the state-of-the-art for high power microwave electronic devices. Primarily due to low breakdown voltage it has not been possible to design and fabricate solid-state transistors that can yield RF output power on the order of 100’s to 1000’s of watts necessary to compete with microwave vacuum tubes. This has severely limited the use of microwave solid-state transistors and devices in power applications, such as transmitters for wireless communications systems, radars, etc. Recent improvements in wide bandgap semiconductor materials technology provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for these applications are MESFET’s fabricated from the 4H-SiC polytype and HFET’s fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively, and amplifiers in the kW range should be possible with power combining technology. 4H-SiC MESFET’s should produce useful performance at least through X-band, and AlGaN/GaN HFET’s should produce useful performance well into the mm-wave region, and potentially as high as 100 GHz. However, a variety of physical effects are currently limiting the application of these devices. The limiting effects are associated with various charge trapping, surface, and space-charge phenomena that affect device performance under large-signal RF operation conditions. Large-signal RF operation and engineering approaches to controlling these effects will be discussed.

 

   

Gabriel Rebeiz

(Term Ended December 2004)

Electrical Engineering and Computer Science,
1301 Beal Ave.,
University of Michigan,
Ann Arbor, MI 48109
USA

t./f:+1-734-647-1793/2106
e.
rebeiz@umich.edu

(email contact is preferred)

Application of MEMs Technology to RF/Microwave Systems

The talk describes the recent advances in RF MEMS switches, varactors and switched capacitors, and their application at RF to mm-wave frequencies. Examples of state-of-the-art MEMS switches, phase shifters and tunable networks (filters, antennas) will be presented. Details of the fabrication process of several MEMS switches and varactors will also be shown. The talk concludes with a discussion of the reliability problems (and solutions) of MEMS switches, and the challenging aspects of packaging for high reliability performance.

 

 

 

 Alwyn Seeds

(Term Ended December 2004)

Dept. of Electronic and Electrical Engineering,
University College London,
Torrington Place,
London, WC1E 7JE,
United Kingdom

t. +44 (0) 20 7679 7928
f. +44 (0) 20 7388 9325

e. a.seeds@ee.ucl.ac.uk


Wireless Access Using Microwave Photonics

Development of the core communications network through dense wavelength division multiplex technology has led to massively increased transmission capacity, with many internet connections running at less than 20% utilisation. However the provision of broadband (> 2 Mb/s) access has been relatively slow and expensive, particularly broadband wireless access.

In this talk, the use of wireless over fibre technology to facilitate broadband wireless access will be discussed. Currently deployed narrowband cellular systems will be described, followed by, in turn, passive pico-cell approaches for in-building coverage, microwave and millimetre-wave systems for local area outdoor use. The technologies required will be illustrated from research programmes in Europe, the Asia-Pacific region, and the Americas. Finally, likely future developments in these systems will be described.

Christian Schaffer (Regional Lecturer)

(Term Ended December 2004)

University Dresden,
Communications Laboratory,
Helmholtzstr.
18 D-01062,
Dresden,
Germany

e. schae@ifn.et.tu-dresden.de

 

Microwave Photonics for Broadband Radio Systems

The new emerging field of Microwave photonics can be defined as the study of the interactions between optical waves and high-frequency electrical signals. A number of applications is of increasing commercial importance i.e. distribution of microwave signals, optical beamforming in phased array antennas, optical delay lines and the generation of microwave signals. Different methods of generation and distribution of microwave signals up to 100 GHz for application in a broadband (>100Mbit/s) cellular radio system are presented.