WSC: ADVANCED TECHNOLOGIES FOR NEXT GENERATION RFICS

Date & Time: Sunday, June 12; 8:00 AM to 5:00 PM

Location: Long Beach Convention Center, Room 103AB

 Topics & Speakers:  

• Prospects on Silicon CMOS for High frequency application, J. D. Alamo, MIT

• BAW and MEMs above silicon for RF applications, P. Ancey, STMicroelectronics

• BAW Filters for Next Generation RFICs, E. Schmidhammer, EPCOS

• FBAR for RF applications, R. Ruby, Agilent

• Advanced Technologies and Future RF Architectures, M. H. Smith, Amalfi Semiconductor

• Bulk Acoustic Wave Filters for Mobile Cellular Communications, H. J. Timme, Infineon

• Impact of new technologies for new RF systems, C. Nguyen, DARPA

• Freescale's RF-IC Technologies - The Role of III-V and Si-based Devices in Advanced RF Applications, M. Huang, Motorola

Organizers:

D. Belot, STMicroelectronics

Y. Deval, IXL lab

D. SAIAS, STMicroelectronics

Sponsors:

MTT-23: RFIC

2005 RFIC symposium  

New technologies are currently emerging, which will dramatically impact the design of radiofrequency integrated circuits in a close future. Among them, the advent of Bulk Acoustic Wave devices (BAW) as well as Silicon On Insulator industrial processes (SOI) will undoubtedly open the way to a new era of RFIC System On Chip ¨C assuming that the cost remain as low as possible and the reliability as high as possible. This workshop addresses different BAW technologies and approaches, emphasizing on RF functions for which this device cannot be overlooked. SOI technologies will be addressed too, for its influence on high frequencies as well as low-power consumption, and mixed-signal circuits. Finally, carbon nanotubes will be presented, as it might become an alternative to silicon transistors in the future.