WSJ: PRACTICAL IMPLEMENTATION OF RF POWER AMPLIFIERS FOR CELLULAR BASE STATIONS

Date & Time: Sunday, June 12; 1:00 PM to 5:00 PM

Location: Long Beach Convention Center, Room 202

Topics & Speakers: 

• Device Technologies for Cellular Base Station PAs: M. Feng, University of Illinois

• High Efficiency GaN Devices for WCDMA Base Station Applications: Y. Tateno, Eudyna Devices Inc.

• High-Voltage HBTs for Cellular Base Station PAs: L. Wang, Watkins

• Physics-Based and Scalable BSIM4 Models for LD-MOSFETs, J. Hwang, Lehigh University

• Distributed Effects of LDMOS PAs: K. Goverdhanam, Agere Systems

• Thermal Models for LD-MOSFETs: P. Roblin, Ohio State University

• High Power and High Efficiency Balanced Amplifier Reference Design Implementation, C. Shih, Infineon

Organizers:

K. Goverdhanam, Agere Systems

J. Hwang, Lehigh University

P. Gammel, Agere Systems

O. Lopez, Agere Systems

Sponsors:

MTT-5: Microwave High-Power Techniques  

RF power amplifiers (PAs) for third and newer generations of cellular base stations such as those of UMTS, Edge, etc. remain a technical challenge. PA designs must meet stringent linearity requirements for multi-tone high peak-to-valley modulation operations. High-efficiency and thermally stable PAs are needed for tower-top locations. New packages such as those made of liquid crystal polymers promise low cost and near hermeticity. Alternative device technologies are desirable for higher-frequency operations but their cost and reliability are not proven. Non-proprietary device models are critical for foundry-independent and mixed-mode designs. Distributed and balanced amplifier designs can lessen the demand on device technology. The solutions for the technical challenges must be low cost as unit price continues to erode. This workshop focuses on the above-mentioned challenges for practical implementation of RF power amplifiers for cellular base station applications.