Dr. Gabriele Formicone received the Laurea in Physics from the University of Rome “La Sapienza” (Italy), M.S. and Ph.D. in Electrical Engineering from Arizona State University in Tempe, AZ, USA. He has 20+ years of industry experience in the design and characterization of RF/Microwave power transistors. His expertise covers Silicon Bipolar, Vertical and Lateral DMOS transistors and GaN HEMT RF power technologies, spanning from TCAD simulations for transistor design and process optimization, to transistor layout and RF power amplifier design and characterization. Dr. Formicone has worked for Motorola/Freescale from 1997 to 2005 and has been with Integra Technologies, Inc. since then, where he is Director of Technology and Innovation. He has co-authored several articles on RF & MW Solid-State Power Amplifier Technology in IEEE MTT-S and EuMA sponsored conferences. Dr. Formicone is IEEE Senior Member and (part-time) faculty associate at Arizona State University in the Department of Electrical Engineering.