Leo C. N. de Vreede (M’01–SM’04) was born in Delft, The Netherlands, in 1965. He received the B.S. degree in electrical engineering from The Hague Polytechnic, The Hague, The Netherlands, in 1988, and the Ph.D. degree from the Delft University of Technology, Delft, The Netherlands, in 1996. In 1988, he joined the Department of Electrical Engineering, Laboratory of Telecommunication and Remote Sensing Technology, Delft University of Technology. From 1988 to 1990, he was involved in the characterization and physical modeling of CMC capacitors. From 1990 to 1996, he was involved with the modeling and design aspects of HF silicon ICs for wideband communication systems. In 1996, he became an Assistant Professor with the Delft University of Technology, where he was involved with nonlinear distortion behavior of bipolar transistors at the device physics level, compact model level, as well as the circuit level at the Delft Institute of Microelectronics and Submicron Technology (DIMES). During Winter 1998–1999, he was a guest with the High-Speed Device Group, University of California at San Diego, La Jolla. In 1999, he became an Associate Professor, responsible for the Microwave Components Group, Delft University of Technology. His current interest is technology optimization and circuit design for improved RF performance and linearity.