Our Field of Interest
The committe interests span a wide range of devices, including active and passive devices; two-, three-, and multi-terminal devices; discrete and IC-embedded devices; lumped and distributed devices; semiconductor as well as other (non-semiconductor) devices, excluding only those devices (such as ferrite and superconducting) which are within the domain of other MTT Society technical committees.
The MTT-7 committee concerns itself with all significant aspects of engineering the devices, including their design, layouts, optimization, and tradeoffs; modeling, simulation, testing, and characterization; characteristics, performance, and applications; reliability, failure mechanisms and lifetimes; parasitics, packaging, and electrical or thermal requirements; sensitivity to operating conditions or environment, such as temperature, nuclear radiation, and magnetic field; control via optical excitation, mechanical stress, and external fields; quality control, reducibility, and cost; and the history, evolution, future prospects, and fundamental limitations.
The mission of MTT-7 Microwave and Millimeter-Wave Solid-State Devices is to monitor the developments in both the emerging and the technologically significant solid-state device technologies for microwave and/or millimeter-wave applications; plan and coordinate the activities of the IEEE MTT Society by cooperating with other Technical Committees to promote the dissemination and sharing of technical knowledge in those areas.
The committee consists of MTT-S and related society members from academia, government, and industry with significant expertise in those technologies.
The committee covers solid-state device technologies@for microwave and/or millimeter-wave applications.
- Si, III-V, large bandgap, and others
- bipolar, CMOS, FET, HEMT, and others
- two-, three-, and multi-terminal devices
- devices for specific circuits (power amplifiers, low-noise amplifiers, mixers, oscillators, etc.)
- devices for specific applications (ultra low power, ultra high power, ultra high speed, cutting edge of CMOS device, etc.)