Advances in Linearization of Wideband (GaN) Power Amplifiers

Advances in Linearization of Wideband (GaN) Power Amplifiers

Date of original webcast: Tuesday, June 14, 2016

Duration: 1 hour

Format: mp4

Summary

This presentation discusses the state of the art in achieving wideband (> 1 GHz) linearization of power amplifiers. Multi-octave bandwidth linearization has been achieved at frequencies from L through millimeter-wave bands. Basic linearization concepts are reviewed. Emphasis is placed on the use of predistortion linearization and particularly on its application with amplifiers employing GaN FET power devices. The trades between using a single predistortion linearizer and multi-band linearizers are discussed. The effect of harmonics (both even and odd order distortion products) and their correction for applications that cover more than an octave are considered.

Speakers

Dr. Allen Katz

Dr. Allen Katz

Dr. Allen Katz is a professor of Electrical/Computer Engineering at The College of New Jersey.

Michael C. Hamilton, Ph.D.

Michael C. Hamilton, Ph.D.

Dr. Michael C. Hamilton is an Associate Professor in the Electrical and Computer Engineering Deptartment at Auburn University and the Assistant Director of the Alabama Microelectronics Science and Technology Center.