Monolithic Microwave Integrated Circuits: Design Strategies for First-Time Success
Date of original webcast: Tuesday, November 8, 2016
Duration: 1 hour
The ever-expanding need for higher data rates is accelerating the development of 5G cellular systems, millimeter-wave backhaul microwave links, and ultrawide-band highly integrated circuits. Concurrently, commercial and military applications are seeking the replacement of discrete hybrid solutions with MMICs to increase performance andreduce size, weight, power, and cost (so called “SWaP-C”). The development cycle of MMICs in III-V semiconductors (e.g., GaAs, GaN, and InP) is costly and time consuming. However, a successful design can dramatically reduce the cost per unit, increase performance, and extend the reliability of the entire system.
This webinar reviews the cost drivers in the MMIC development cycle, the expected cost per unit, critical active/passive modeling techniques, estimation of MMIC life-time, and instability suppression.
Ali Darwish, Ph. D., received his Ph.D. degree from Massachusetts Institute of Technology (MIT), Cambridge, MA, in 1996. In 1990, he joined COMSAT Laboratories where he conducted the experimental work on his M. S. thesis. In 1992, he joined the Optics and Quantum Electronics Group, MIT as a research assistant. In 1997, he co-founded Amcom Communications Inc., a leading supplier of high power microwave integrated circuits. At Amcom Communications he served as the vice president of product development where he designed and commercialized several product lines. In May 2003 he joined a US government research lab where he conducted research on wide bandgap materials (GaN), thermal analysis of active devices, and novel MMIC concepts.
Dr. Darwish designed several state-of-the-art monolithic microwave integrated circuits (MMICs) including an X-band low phase noise oscillator, GaN mm-wave power amplifiers, SiGe mm-wave amplifiers, broadband high power amplifiers (in the L-, S-, X-, Ku-, and Ka-band), mixers, digital attenuator, and phase shifters. Dr. Darwish is an associate editor of IEEE Microwave Magazine, an adjunct faculty member with John Hopkins University, and an instructor with Besser Associates. He is an IEEE Senior Member and an active member of MTT-S. His areas of expertise include novel techniques in millimeter-wave MMICs [in GaN and gallium arsenide (GaAs)], sub-terahertz communications, and reliability and thermal characterization of MMICs. He has published over 100 journal and conference papers.
Michael C. Hamilton, Ph.D.
Dr. Michael C. Hamilton is an Associate Professor in the Electrical and Computer Engineering Deptartment at Auburn University and the Assistant Director of the Alabama Microelectronics Science and Technology Center.